D45H11 ? pnp power amplifier ? 2007 fairchild semiconductor corporation www.fairchildsemi.com D45H11 rev. 1.2.0 1 december 2013 D45H11 pnp power amplifier features ? sourced from process 5q ? general-purpose switching transistor ? low corrector-emitter saturation voltage ? high-fast switching speed ordering information absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. part number marking package packing method D45H11 D45H11 to-220 3l rail symbol parameter value unit v ceo collector-emitter voltage -80 v i c collector current - continuous -10 a t j , t stg operating and storage junction temperature range -55 to +150 c 1 to-220 1. base 2. collector 3. emitter mark: D45H11 description this device is designed for power amplifier, regulator, and switching circuits where speed is important.
D45H11 ? pnp power amplifier ? 2007 fairchild semiconductor corporation www.fairchildsemi.com D45H11 rev. 1.2.0 2 thermal characteristics (1) values are at t a = 25 c unless otherwise noted. note: 1. device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm: mounting pad for the collector lead minimum 6 cm 2 . electrical characteristics values are at t a = 25 c unless otherwise noted. symbol parameter max. unit p d total device dissipation 60 w derate above 25 c 480 mw/ c r jc thermal resistance, junction to case 2.1 c/w r ja thermal resistance, junction to ambient 62.5 c/w symbol parameter conditions min. max. unit off characteristics v (br)ceo collector-emitter breakdown voltage i c = -100 ma, i b = 0 -80 v i cbo collector cut-off current v cb = -80 v, i e = 0 -10 a i ebo emitter cut-off current v eb = -5 v, i c = 0 -100 a on characteristics h fe dc current gain v ce = -1 v, i c = -2 a 60 v ce = -1 v, i c = -4 a 40 v ce (sat) collector-emitter saturation voltage i c = -8 a,i b = -0.4 a -1.0 v v be (sat) base-emitter saturation voltage i c = -8 a,i b = -0.8 a -1.5 v v be (on) base-emitter on voltage v ce = -2 v, i c = -10 ma -0.54 -0.65 v small signal characteristics f t current gain bandwidth product i c = -500 ma, v ce = -10 v 40 mhz
D45H11 ? pnp power amplifier ? 2007 fairchild semiconductor corporation www.fairchildsemi.com D45H11 rev. 1.2.0 3 typical performance characteristics figure 1. typical pulsed current gain vs. collector current figure 2. collector-emitter saturation voltage vs. collector current figure 3. base-emitter saturation voltage vs. collector current figure 4. base-emitter on voltage vs. collector current figure 5. collector cut-off current vs. ambient temperature figure 6. safe operating area to-220 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 40 60 80 100 120 140 160 180 200 i - collector current (a) h - typical pulsed current gain c fe 125 c 25 c - 40 c vce = 5v 0.1 1 10 15 0 0.2 0.4 0.6 0.8 1 i - collector current (a) v - collector-emitter voltage (v) cesat c = 10 125 oc - 40 oc 25 c 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 i - collector current (a) v - base-emitter voltage (v) besat c = 10 125 oc - 40 oc 25 c 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 i - collector current (a) v - base-emitter voltage (v) besat c = 10 125 oc - 40 oc 25 c 25 50 75 100 125 150 0.01 0.1 1 10 100 t - ambient temperature ( c) i - collector current (na) a v = 50v cb o cbo 10 0 10 1 10 2 10 -1 10 0 10 1 500us 100us 1ms dc single pulse rthjc=2.1c/w t a = 25 o c -i c , collector current [a] -v ce , collector- emitter voltage [v]
D45H11 ? pnp power amplifier ? 2007 fairchild semiconductor corporation www.fairchildsemi.com D45H11 rev. 1.2.0 4 typical performance characteristics (continued) figure 7. maximum power dissipation vs. case temperature figure 8. maximum power dissipation vs. ambient temperature figure 9. thermal response
D45H11 ? pnp power amplifier ? 2007 fairchild semiconductor corporation www.fairchildsemi.com D45H11 rev. 1.2.0 5 physical dimensions figure 10. to-220, molded, 3-lead, jedec variation ab (active) package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/to/to220b03.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-to220b03.pdf . to-220
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